dim 1000nsm33 - ts000 single switch igbt module replaces ds6093 - 1 ds6093 - 2 october 2013 (ln 3101 7 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? high current density enhanced dmos spt ? isolated alsic base with aln substrates applications ? high reliability inverters ? motor controllers ? traction drives ? choppers the powerline range of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 12 00v to 65 00v and currents up to 2400a. the dim 10 00n s m33 - t s 000 is a single switch 33 00v, soft punch through n - channel enhancement mode, insulated gate bipolar transistor (igbt) module . the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise ci rcuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 10 00n s m33 - t s 000 note: when ordering, please use the complete part number key parameters v ces 33 00 v v ce(sat) * (typ) 2.2 v i c (max) 10 00 a i c(pk) (max) 20 0 0 a * measured at the auxiliary terminals fig. 1 circuit configuration outline type code: n (see fig. 11 for further information) fig. 2 package g e 3(e) c 1(e) 2(c) 4(c)
dim 1000nsm33 - ts000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety pre cautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ces collector - emitter voltage v ge = 0v 3 300 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 110 c 10 00 a i c(pk) peak collector current 1ms, t case = 140 c 20 00 a p max max. transistor power dissipation t case = 25c, t j = 150c 10.4 k w i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 320 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 6000 v q pd partial discharge C per module iec1287, v 1 = 35 00v, v 2 = 26 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 33 mm clearance: 20 mm cti (comparative tracking index): >600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C C th(j - c) thermal resistance C C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 150 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim 1000nsm33 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 4 ma v ge = 0v, v ce = v ces , t case = 125c 60 ma v ge = 0v, v ce = v ces , t case = 150c 100 ma i ges gate leakage current v ge = 20 v, v ce = 0v 1 a v ge(th) gate threshold voltage i c = 8 0ma, v ge = v ce 5.7 v v ce(sat) ? collector - emitter saturation voltage v ge = 15v, i c = 1000a 2.2 v v ge = 15v, i c = 1000a, t j = 125c 2.8 v v ge = 15v, i c = 1000a, t j = 150c 3.0 v i f diode forward current dc 10 00 a i fm diode maximum forward current t p = 1ms 20 00 a v f ? diode forward voltage (igbt arm) i f = 1000a 2.4 v i f = 1000a, t j = 125c 2.5 v i f = 1000a, t j = 150c 2.4 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 17 0 nf q g gate charge 15v including external c ge 17 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz 4 nf l m module inductance 15 nh r int internal resistance 135 ? sc data short circuit current, i sc t j = 150 c, v cc = 2500 v t p 10s, v ge 15v v ce (max) = v ces C l * x di/dt iec 60747 - 9 3700 a note: ? me asured at the auxiliary terminals * l is the circuit inductance + l m
dim 1000nsm33 - ts000 4 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1000a v ge = 15v v ce = 1800v r g(on) = 2. 2 ? r g(off) = 2.2 ? c ge = 220nf l s ~ 100nh 1.9 s t f fall time 520 ns e off turn - off energy loss 1800 mj t d(on) turn - on delay time 560 ns t r rise time 360 ns e on turn - on energy loss 1300 mj q rr diode reverse recovery charge i f = 10 00a v ce = 1800v di f /dt = 27 00a/s 600 c i rr diode reverse recovery current 680 a e rec diode reverse recovery energy 750 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1000a v ge = 15v v ce = 1800v r g(on) = 2. 2 ? r g(off) = 2.2 ? c ge = 220nf l s ~ 100nh 2 .0 s t f fall time 570 ns e off turn - off energy loss 2000 mj t d(on) turn - on delay time 550 ns t r rise time 420 ns e on turn - on energy loss 1600 mj q rr diode reverse recovery charge i f = 10 00a v ce = 1800v di f /dt = 2 7 00a/s 935 c i rr diode reverse recovery current 775 a e rec diode reverse recovery energy 1200 mj t case = 150c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 1000a v ge = 15v v ce = 1800v r g(on) = 2.2 ? g(off) = 2.2 ? ge = 220nf l s ~ 100nh 2 .0 s t f fall time 580 ns e off turn - off energy loss 2100 mj t d(on) turn - on delay time 550 ns t r rise time 430 ns e on turn - on energy loss 1750 mj q rr diode reverse recovery charge i f = 1000a v ce = 1800v di f /dt = 2 7 00a/s c rr diode reverse recovery current 825 a e rec diode reverse recovery energy 1450 mj
dim 1000nsm33 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim 1000nsm33 - ts000 6 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal impedance
dim 1000nsm33 - ts000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 9 00g module outline type code: n fig. 11 module outline drawing
dim 1000nsm33 - ts000 8 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability o f the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact custome r service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncon trolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a prod uct failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even wh en disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature produ ct failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting i n fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate pr oduct status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for vo lume production is in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product ha s been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dynex semiconductor ltd. 201 3 technical documentation C not for resale.
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